www.kersemi.com 1 power mosfet irfr9210, irfu9210, sihfr9210, sihfu9210 features ? dynamic dv/dt rating ? repetitive avalanche rated ? surface mount (irfr9210/sihfr9210) ? straight lead (irfu9210/sihfu9210) ? available in tape and reel ? p-channel ? fast switching ? lead (pb)-free available description the power mosfets technology is the key to vishay?s advanced line of power mosfet transistors. the efficient geometry and unique processing of the power mosfet design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. the dpak is designed for su rface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu/sihfu series) is for through-hole mounting applications. power dissipation levels up to 1.5 w are possible in typical surface mount applications. note a. see device orientation. notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. v dd = - 50 v, starting t j = 25 c, l = 124 mh, r g = 25 , i as = - 1.9 a (see fig. 12). c. i sd - 1.9 a, di/dt 70 a/s, v dd v ds , t j 150 c. d. 1.6 mm from case. e. when mounted on 1" square pcb (fr-4 or g-10 material). product summary v ds (v) - 200 r ds(on) ( )v gs = - 10 v 3.0 q g (max.) (nc) 8.9 q gs (nc) 2.1 q gd (nc) 3.9 configuration single s g d p-channel mosfet dpak (to-252) ipak (to-251) a v aila b le rohs* compliant ordering information package dpak (to-252) dpak (to-252) dpak (to-252) ipak (to-251) lead (pb)-free irfr9210pbf IRFR9210TRpbf a - irfu9210pbf sihfr9210-e3 sihfr9210t-e3 a - sihfu9210-e3 snpb irfr9210 IRFR9210TR a IRFR9210TRl a irfu9210 sihfr9210 sihfr9210t a sihfr9210tl a sihfu9210 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 200 v gate-source voltage v gs 20 continuous drain current v gs at - 10 v t c = 25 c i d - 1.9 a t c = 100 c - 1.2 pulsed drain current a i dm - 7.6 linear derating factor 0.20 w/c linear derating factor (pcb mount) e 0.020 single pulse avalanche energy b e as 300 mj repetitive avalanche current a i ar - 1.9 a repetitive avalanche energy a e ar 2.5 mj maximum power dissipation t c = 25 c p d 25 w maximum power dissipation (pcb mount) e t a = 25 c 2.5 peak diode recovery dv/dt c dv/dt - 5.0 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 260 d
www.kersemi.com 2 irfr9210, irfu9210, sihfr9210, sihfu9210 note a. when mounted on 1" square pcb (fr-4 or g-10 material). notes a. repetitive rating; pulse width limited by maximum junction temper ature (see fig. 11). b. pulse width 300 s; duty cycle 2 %. thermal resistance ratings parameter symbol min. typ. max. unit maximum junction-to-ambient r thja - - 110 c/w maximum junction-to-ambient (pcb mount) a r thja --50 maximum junction-to-case (drain) r thjc --5.0 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 200 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = - 1 ma - - 0.23 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 2.0 - - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = - 200 v, v gs = 0 v - - - 100 a v ds = - 160 v, v gs = 0 v, t j = 125 c - - - 500 drain-source on-state resistance r ds(on) v gs = - 10 v i d = - 1.1 a b --3.0 forward transconductance g fs v ds = - 50 v, i d = - 1.1 a 0.98 - - s dynamic input capacitance c iss v gs = 0 v, v ds = - 25 v, f = 1.0 mhz, see fig. 5 - 170 - pf output capacitance c oss -54- reverse transfer capacitance c rss -16- total gate charge q g v gs = - 10 v i d = - 1.3 a, v ds = - 160 v, see fig. 6 and 13 b --8.9 nc gate-source charge q gs --2.1 gate-drain charge q gd --3.9 turn-on delay time t d(on) v dd = - 100 v, i d = - 2.3 a, r g = 24 , r d = 41 , see fig. 10 b -8.0- ns rise time t r -12- turn-off delay time t d(off) -11- fall time t f -13- internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7.5- drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol showing the integral reverse p - n junction diode --- 1.9 a pulsed diode forward current a i sm --- 7.6 body diode voltage v sd t j = 25 c, i s = - 1.9 a, v gs = 0 v b --- 5.8v body diode reverse recovery time t rr t j = 25 c, i f = - 2.3 a, di/dt = 100 a/s b - 110 220 ns body diode reverse recovery charge q rr - 0.56 1.1 c forward turn-on time t on intrinsic turn-on time is neglig ible (turn-on is dominated by l s and l d ) d s g s d g
www.kersemi.com 3 irfr9210, irfu9210, sihfr9210, sihfu9210 typical characteristics 25 c, unless otherwise noted fig. 1 - typical output characteristics, t c = 25 c fig. 2 - typical output characteristics, t c = 150 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature
www.kersemi.com 4 irfr9210, irfu9210, sihfr9210, sihfu9210 fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area
www.kersemi.com 5 irfr9210, irfu9210, sihfr9210, sihfu9210 fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case p u lse w idth 1 s d u ty factor 0.1 % r d v gs r g d.u.t. - 10 v + - v ds v dd v gs 10 % 90 % v ds t d(on) t r t d(off) t f
www.kersemi.com 6 irfr9210, irfu9210, sihfr9210, sihfu9210 fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit r g i as 0.01 t p d.u.t. l v ds + - v dd - 10 v var y t p to obtain required i as i as v ds v dd v ds t p q gs q gd q g v g charge - 10 v d.u.t. - 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v c u rrent reg u lator c u rrent sampling resistors same type as d.u.t. + -
www.kersemi.com 7 irfr9210, irfu9210, sihfr9210, sihfu9210 fig. 14 - for p-channel p. w . period di/dt diode reco v ery d v /dt ripple 5 % body diode for w ard drop re-applied v oltage re v erse reco v ery c u rrent body diode for w ard c u rrent v gs = - 10 v * v dd i sd dri v er gate dri v e d.u.t. i sd w a v eform d.u.t. v ds w a v eform ind u ctor c u rrent d = p. w . period + - - - - + + + * v gs = - 5 v for logic le v el and - 3 v dri v e de v ices peak diode recovery dv/dt test circuit v dd ? d v /dt controlled b y r g ? i sd controlled b y d u ty factor "d" ? d.u.t. - de v ice u nder test d.u.t. circ u it layo u t considerations ? lo w stray ind u ctance ? gro u nd plane ? lo w leakage ind u ctance c u rrent transformer r g compliment n -channel of d.u.t. for dri v er
|
